Y. Saito

A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film

Hitoshi Wakabayashi, Y. Saito, Kiyoshi Takeuchi et al. · IEEE Transactions on Electron Devices · 2001 · 54 citations

Materials Science, Electrical Engineering, Engineering +9

Electrical Switching in Evaporated Lead Phthalocyanine Films

Yasuhiko Machida, Y. Saito, Akira Taomoto et al. · Japanese Journal of Applied Physics · 1989 · 39 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Memory-State Dependence of Random Telegraph Noise of $ \hbox{Ta}_{2}\hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM

Masayuki Terai, Yukihiro Sakotsubo, Y. Saito et al. · IEEE Electron Device Letters · 2010 · 35 citations

Electrical Engineering, Engineering, Physics +7

Low-resistance self-aligned Ti-silicide technology for sub-quarter micron CMOS devices

Tohru Mogami, Hitoshi Wakabayashi, Y. Saito et al. · IEEE Transactions on Electron Devices · 1996 · 32 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Effect of bottom electrode of ReRAM with Ta<inf>2</inf>O<inf>5</inf>/TiO<inf>2</inf> stack on RTN and retention

Masayuki Terai, Yukihiro Sakotsubo, Y. Saito et al. · 2009 · 24 citations

Materials Science, Materials Engineering, Bottom Electrode +6