Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2006 · 20 citations · 8 references
Optical MaterialsEngineeringPhotoluminescence MethodHexagonal InnLuminescence PropertyBand EdgeSemiconductorsIi-vi SemiconductorOptical PropertiesQuantum MaterialsMaterials ScienceHexagonal Inn CrystalPhotoluminescencePhysicsCrystal MaterialTopological HeterostructuresPhotonic MaterialsOptoelectronic MaterialsSemiconductor MaterialOptical MeasurementsCrystallographyCrystal Structure DesignApplied PhysicsCondensed Matter PhysicsCrystalsOptoelectronics
Abstract The optical properties of hexagonal InN crystal are investigated by reflectance, absorption and photoluminescence method. With use of the theoretical formula of these spectra, both of conduction and valence band properties are analysed. As a result, the average effective electron and hole mass values at the band edge are found to be about 0.046(±0.01) m 0 and 0.2(±0.05) m 0 , respectively. The photoluminescence emitted from the cleaved edge was strongly polarized. The agreement of the peak energies of π and σ polarized light means that A, B, and C band edges are closely located in energy space. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Physical properties of InN with the band gap energy of 1.1 eV
Takashi Inushima, V. V. Mamutin, V. A. Vekshin et al. · Journal of Crystal Growth · 2001 · 224 citations
Effective mass of InN epilayers
S. P. Fu, Y. F. Chen · Applied Physics Letters · 2004 · 135 citations
Semiconductors, Engineering, Physics +14