Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N[sub 2]O Gas

Abstract

thin films were grown on Ru, Pt, -passivated Ru, and Si substrates by plasma-enhanced atomic layer deposition at . The Ru-substrate-enhanced growth ( times higher than that on Si at <100 cycles) was attributed to the electron donation and the diffusion of previously contained oxygen from Ru onto the growing surface. When the layer was interposed between the Ru substrate and film, even as thin as 0.4 nm, the electron donation was largely suppressed. Above 16–20 nm, the growth rates of rutile (on Ru) and anatase (on Si) were 0.055 and 0.04 nm/cycle, respectively.