Al‐Doped TiO₂ Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

Abstract

Al-doped TiO2 thin films to be used in future DRAM capacitors with excellent leakage properties as well as high dielectric constants are fabricated. The next generation stack structured DRAM cell composed of a transistor and a capacitor is shown (see Figure). A large cell capacitance is required for successful operation of DRAMs irrespective of the feature size of the cell. Therefore, as scaling down of the DRAMs proceeds, a higher-k material such as Al-doped TiO2 has to be eventually implemented in the capacitor. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2008/adma200701085_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.