Electronics Letters · 1994 · 44 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignDevice CharacterizationDevice ModelingIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsChannel Length ScalingCmos ScalingThreshold VoltageThreshold Voltage ModelingThreshold Voltage Scaling
The threshold voltage matching dependency on device area is investigated for a standard 1.2 µm CMOS technology. A deviation from the linear dependency of the threshold voltage matching on the inverse of the square root of the effective channel area is observed for transistors of 1.2 µm channel length.
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