IEEE Transactions on Electron Devices · 1973 · 11 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDevice ModelingDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsTransistor BiasingBipolar Junction Transistor ModelingBipolar Junction Transistor SimulationCurrent Crowding
It is shown that in a model of a bipolar transistor with a rectangular configuration, the base-crowding effect may be represented by a diode and a resistor in parallel between the internal base point and the external base connection with an accuracy of better than four percent.
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