EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsGate Oxide InterfacesGate Oxide ScalingGate Oxide Thickness EffectsHigh-frequency PerformanceRf Cmos DesignSiliconSubthreshold ConductionSubthreshold Operation
Very high performance 0.1 /spl mu/m nMOSFETs are fabricated with 3.5 nm gate oxide and shallow arsenic/boron (halo) source-drain extension. A 10 ps/stage della is recorded at 85 K from a 0.08 pm channel ring osMlator, which is the fastest switching speed ever re- ported for any silicon device. The delay at room temper- ature is 13 ps/stage. Unity-current-gain frequency cutoffs (f/sub r/) of a 0.09 /spl mu/m channel device are 119 GHz at 85 K and 93 GHz at 300 K. Record high saturation transconductances, 1040 mSImm at 85 K and 740 mS/MM at 300 K , are obtained from a 0.05 /spl mu/m channel device. Good subthreshold characteristics are achieved for 0.1 /spl mu/m channel devices.
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High performance 0.1- mu m room temperature Si MOSFETs
Ran Yan, K.F. Lee, Dae‐Young Jeon et al. · 2003 · 22 citations