A Compact Model of Program Window in HfO_{<italic>x</italic>} RRAM Devices for Conductive Filament Characteristics Analysis

Abstract

This paper presents a physics-based compact model for the program window in HfOx resistive random access memory devices, defined as the ratio of the resistances in high resistance state (HRS) and low resistance state (LRS). This model allows extracting the characteristics of the conductive filament (CF) in HRS. For a given forming current compliance limit, the program window is shown to be correlated to the thickness of the reoxidized portion of the CF in HRS, which can be modulated by the reset voltage amplitude. On the other hand, the statistical distribution of the memory window depends exponentially on the barrier thickness variations that points to the critical role of reset conditions for the performance optimization of RRAM devices.