Simultaneous modulation of electron and hole conductivity in a new periodic GaAs doping multilayer structure

Abstract

A new periodic n-p doping multilayer structure in GaAs grown by molecular beam epitaxy is presented, in which the concentration of electrons and holes in the respective doping regions and thereby the conductivity can be varied simultaneously by more than 1012 carriers cm−2 per layer by an external potential difference eUnp applied between the constituent n- and p-type layers. The intriguing properties of this prototype of a bulk multijunction field-effect transistor structure result from a suppression of the direct electron-hole recombination by a space-charge potential periodically modulated in the direction of layer growth. The observed data are in excellent agreement with the calculated characteristics using the preselected design parameters of the structure.