Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 11 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsInterface ScienceSurface ScienceScanning Probe MicroscopySemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface CrystallographySurface PhysicsAtomic-scale Surface ImagingInterface FormationInterface StructureMetal-semiconductor InterfacesSchottky Barrier ContactsSilicide ContactsSilicon Surface ScienceTwin Boundaries
The structure of epitaxially grown Ni silicide on Si(001) has been studied by scanning tunneling microscopy. Atomically resolved STM images of this surface show unreconstructed (1×1) NiSi2 islands and a (2×1) adsorbed Ni layer. The NiSi2 islands often contain twin boundaries with inverse pyramidal structures and ‘‘facet bars’’ at increased coverage. From observed images, it is suggested that the poor reproducibility in the Schottky barrier height of this interface originates from the complex interface structure.