Yoonho Khang

Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

Cheolkyu Kim, Dongmin Kang, Tae-Yon Lee et al. · Applied Physics Letters · 2009 · 98 citations

Natural Sciences, Materials Engineering, Materials Science +14

Fullerene thermal insulation for phase change memory

Cheolkyu Kim, Dongseok Suh, Kijoon H. P. Kim et al. · Applied Physics Letters · 2008 · 65 citations

Engineering, Materials Science, Physics +17

Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices

Tae-Yon Lee, Kijoon H. P. Kim, Dongseok Suh et al. · Applied Physics Letters · 2009 · 50 citations

Engineering, Materials Engineering, Materials Science +16

Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices

Dongseok Suh, Cheolkyu Kim, Kijoon H. P. Kim et al. · Applied Physics Letters · 2010 · 48 citations

Engineering, Materials Science, Physics +16

Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing

Sung‐Wook Nam, Cheolkyu Kim, Hyo-Sung Lee et al. · Applied Physics Letters · 2008 · 46 citations

Engineering, Materials Engineering, Materials Science +17