An injection efficiency model to characterize the injection capability and turn-off speed for >10kV 4H-SiC IGBTs

An experimentally verified IGBT model implemented in the Saber circuit simulator

Allen R. Hefner, D.M. Diebolt · IEEE Transactions on Power Electronics · 1994 · 305 citations

Engineering, Electrical Engineering, Physics +17

An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor

Allen R. Hefner, David L. Blackburn · Solid-State Electronics · 1988 · 257 citations

Engineering, Electrical Engineering, Circuit Theory +15

Smart grid technologies

Jun Wang, Alex Q. Huang, Woongje Sung et al. · IEEE Industrial Electronics Magazine · 2009 · 257 citations

Engineering, Electrical Engineering, Power Electronics +16

SiC Power Devices for Microgrids

Qingchun Zhang, Robert Callanan, Mrinal K. Das et al. · IEEE Transactions on Power Electronics · 2010 · 175 citations

Engineering, Electrical Engineering, Materials Science +17

Modeling buffer layer IGBTs for circuit simulation

Allen R. Hefner · IEEE Transactions on Power Electronics · 1995 · 171 citations

Engineering, Electrical Engineering, Microelectronics +16