Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

M. B. Panish · Journal of The Electrochemical Society · 1980 · 223 citations

Engineering, Materials Engineering, Materials Science +11

Gas source MBE of InP and Ga<i>x</i>In1−<i>x</i>P<i>y</i>As1−<i>y</i> : Materials properties and heterostructure lasers

M. B. Panish, H. Temkin, S. Sumski · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 129 citations

Engineering, Materials Engineering, Materials Science +16

Growth of high-quality Ga<i>x</i>In1−<i>x</i>As<i>y</i>P1−<i>y</i> by chemical beam epitaxy

W. T. Tsang, E. F. Schubert, T. H. Chiu et al. · Applied Physics Letters · 1987 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +17

Molecular beam epitaxy of In0.53Ga0.47As and InP on InP by using cracker cells and gas cells

D. Huet, Marc Lambert, D. Bonnevie et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 43 citations

Natural Sciences, Materials Engineering, Materials Science +9

A new GaAs, GaP, and GaAsxP1−x vacuum deposition technique using arsine and phosphine gas

Frank Morris, Haruyo Fukui · Journal of Vacuum Science and Technology · 1974 · 42 citations

Engineering, Materials Engineering, Materials Science +17