K. Rakennus

Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions

Ferenc Riesz, K. Lischka, K. Rakennus et al. · Journal of Crystal Growth · 1991 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +17

Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by <i>in situ</i> optical reflectometry

Petteri Uusimaa, K. Rakennus, A. Salokatve et al. · Applied Physics Letters · 1995 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +17

Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy

J. Varrio, H. Asonen, J. Lammasniemi et al. · Applied Physics Letters · 1989 · 25 citations

Engineering, Materials Engineering, Materials Science +16

Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

H. Asonen, K. Rakennus, Kirsi Tappura et al. · Journal of Crystal Growth · 1990 · 23 citations

Engineering, Materials Engineering, Materials Science +12

High performance laser diode bars with aluminum-free active regions

M. Jansen, P. Bournes, P. J. Corvini et al. · Optics Express · 1999 · 23 citations · Full text

Engineering, Electrical Engineering, Materials Science +14