New approach to growth of high-quality GaAs layers on Si substrates

J. Varrio, H. Asonen, A. Salokatve, +3

Applied Physics Letters

EngineeringSemiconductorsGaas FilmsMolecular Beam EpitaxyEpitaxial Growth +14

Reduction of surface defects in GaAs grown by molecular beam epitaxy

A. Salokatve, J. Varrio, J. Lammasniemi, +2

Applied Physics Letters

Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringSurface Defects +11

Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy

J. Varrio, H. Asonen, J. Lammasniemi, +2

Applied Physics Letters

Electrical EngineeringEpitaxial GrowthEngineeringPhysicsSurface Science +10

Correlation between initial growth planarity and epilayer tilting in the vicinal GaAs/Si system

Ferenc Riesz, J. Varrio, A. Pesek, +1

Applied Surface Science

Electrical EngineeringEpitaxial GrowthEngineeringApplied PhysicsVicinal Gaas/si System +4

GaAs single-domain growth on exact (100) Si substrate

K.-R. Sprung, Klaus-Thomas Wilke, Günter Heymann, +2

Applied Physics Letters

Electrical EngineeringGood Crystal StructureEngineeringEpitaxial GrowthSingle-domain Growth +9