Continuous-wave, room temperature, ridge waveguide green-blue diode laser

A. Salokatve, Heonsu Jeon, Jie Ding, +10

Electronics Letters

Optical PumpingRoom TemperaturePhotonicsEngineeringSemiconductor Lasers +9

Pseudomorphic separate confinement heterostructure blue-green diode lasers

D. C. Grillo, Y. Fan, Jung Han, +7

Applied Physics Letters

Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices +18

All-solid-source molecular beam epitaxy for growth of III–V compound semiconductors

M. Pessa, M. Toivonen, M. Jalonen, +2

Thin Solid Films

Materials ScienceSemiconductorsEpitaxial GrowthIii–v Compound SemiconductorsEngineering +5

On degradation of ZnSe-based blue-green diode lasers

M. Hovinen, Jie Ding, A. Salokatve, +7

Journal of Applied Physics

Optical MaterialsEngineeringActive Quantum WellLaser ApplicationsLaser Material +14

New approach to growth of high-quality GaAs layers on Si substrates

J. Varrio, H. Asonen, A. Salokatve, +3

Applied Physics Letters

EngineeringSemiconductorsGaas FilmsMolecular Beam EpitaxyEpitaxial Growth +14

Band offsets at the GaInP/GaAs heterojunction

Anssi Lindell, M. Pessa, A. Salokatve, +3

Journal of Applied Physics

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesZero Bias Conductance +11

Reduction of surface defects in GaAs grown by molecular beam epitaxy

A. Salokatve, J. Varrio, J. Lammasniemi, +2

Applied Physics Letters

Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringSurface Defects +11

Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by <i>in situ</i> optical reflectometry

Petteri Uusimaa, K. Rakennus, A. Salokatve, +5

Applied Physics Letters

Materials SciencePhotonicsOptical MaterialsEngineeringMgznsse/znsse Quarter-wave Stacks +10

Growth mode and electronic structure of copper films on aluminium substrates

Christopher J. Barnes, H. Asonen, A. Salokatve, +1

Surface Science

Materials ScienceAluminium NitrideEpitaxial GrowthEngineeringSurface Science +7

All solid source molecular beam epitaxy growth of strained-layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

M. Toivonen, Marko Jalonen, A. Salokatve, +4

Applied Physics Letters

PhotonicsRidge Waveguide LasersEngineeringLaser ScienceSemiconductor Lasers +7