J. Lammasniemi

Reduction of surface defects in GaAs grown by molecular beam epitaxy

A. Salokatve, J. Varrio, J. Lammasniemi et al. · Applied Physics Letters · 1987 · 27 citations

Materials Science, Electrical Engineering, Epitaxial Growth +13

Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy

J. Varrio, H. Asonen, J. Lammasniemi et al. · Applied Physics Letters · 1989 · 25 citations

Electrical Engineering, Epitaxial Growth, Engineering +12

GaInP/AlInP tunnel junction for GaInP/GaAstandem solar cells

Weijian Li, J. Lammasniemi, A. B. Kazantsev et al. · Electronics Letters · 1998 · 13 citations

Majority carrier traps in proton-irradiated GaInP

James Dekker, Antti Tukiainen, R. Jaakkola et al. · Applied Physics Letters · 1998 · 12 citations · Full text

Ion Implantation, Majority Carrier Traps, Nuclear Physics +7