Molecular beam epitaxy of In0.53Ga0.47As and InP on InP by using cracker cells and gas cells

Abstract

In0.53Ga0.47As and InP were grown on InP substrate by using dimeric molecules of arsenic and phosphorus. A Riber cracker cell and a laboratory designed gas cell were used. Cracking rate inside the two kinds of cells was studied by a modulation beam mass spectrometry technique (MBMS). Cracking rate up to 95% was obtained for the gas cell. The ratio M2/M4 in the flux reaches 103. The use of As2 species for In0.53Ga0.47As growth allows a saving of arsenic compared with As4 species. A reduction of the incorporation rate of carbon is observed. Photoluminescence efficiency is increased by a factor of 5. PIN photodiodes exibit low dark current down to 25 nA at−10 V in As2 grown InGaAs, 103 less than in As4 grown ternary material, on mesa diameter of 170 μm. We describe growth conditions of InP by using cracker cell and gas cell as phosphorus sources. Gas source seems to be a promising phosphorus source due to its large autonomy and hydrogen pressure which favors PH3 recombination and impurities reduction.