Applied Physics Letters · 2005 · 37 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMemory DevicesMos CapacitorsNanoelectronicsSemiconductor Device MaterialsSemiconductor NanomaterialsSilicon MaterialsCapacitance-voltage CharacteristicsHysteresis In Capacitance-voltage CurvesLow-power Memory ArchitectureManufacturingMemory Circuit DesignNanocrystalsNanoelectronic Memory DevicesSilicon Dioxide
A metal-oxide-semiconductor structure with NiSi2 nanocrystals embedded in the SiO2 layer has been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.
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