Fabrication of Transfer-Enhanced Semiconductor Substrates by Wafer Bonding and Hydrogen Exfoliation Techniques

Abstract

A transfer-enhanced semiconductor substrate has been demonstrated, integrating a thin InP layer on a Si handle substrate with an imbedded porous silicon layer. A Si wafer was anodized to create a low-density porous surface layer. A thin layer of InP was transferred to the Si handle substrate through wafer bonding and hydrogen-induced exfoliation. High-resolution X-ray diffraction, atomic force microscopy, and transmission electron microscopy characterization showed the structure to have high surface and crystalline quality for epitaxial deposition after undergoing chemical mechanical polishing. Layer transfer capability was demonstrated with a similar structure by mechanical fracture through the porous Si layer.