SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS

Abstract

The chapter will give an overview about the theory of JFETs with special attention to the wide band gap issues related to SiC. After a comprehensive discussion of relevant structures and topologies experimental results are presented and discussed. Especially vertical structures are in the focus of this chapter. Characteristic I-V data will be shown as well as application specific solutions regarding the temperature behavior or the ruggedness of the devices. The status of the JFETs technology will be judged and compared to alternative solutions like MOSFEts or lateral JFETs. Finally, an outlook will be given regarding targeted applications for SiC VJFETs and the resulting requirements as targets for future improvements.