Proceedings of the IRE · 1953 · 125 citations · 3 references
EngineeringElectrical EngineeringPhysicsCircuit TheoryMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyElectric CircuitsElectric FieldsField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect Transistors
Field‑effect transistors are evaluated for potential future applications. Unipolar field‑effect transistors, as proposed by Shockley, were fabricated and experimentally tested. The extended Shockley theory accurately predicts the behavior of these devices, including negative input resistance, and design nomographs are provided.
Unipolar "field-effect" transistors of a type suggested by W. Shockley have been constructed and tested. The idealized theory of Shockley has been extended to cover the actual geometries involved, and design nomographs are presented. It is found that these structures can be designed in such a way as to yield a negative resistance at the input terminals. The characteristics of several units are presented and analyzed. It is shown that these characteristics are in substantial agreement with the extended theory. Finally a speculative evaluation of the possible future applications of field effect transistors is made.
3
A Unipolar "Field-Effect" Transistor
W. Shockley · Proceedings of the IRE · 1952 · 659 citations
Hot Electrons in Germanium and Ohm's Law
W. Shockley · Bell System Technical Journal · 1951 · 556 citations
Energy Distribution Function of Electrons in Pure Helium
Fritz H. Reder, Sanborn C. Brown · Physical Review · 1954 · 47 citations