D. Stephani

Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

Reinhold Schomer, Peter Friedrichs, Dethard Peters et al. · IEEE Electron Device Letters · 1999 · 227 citations

Materials Science, Materials Engineering, Electrical Engineering +15

ATLAS: Technical proposal for a general-purpose p p experiment at the Large Hadron Collider at CERN

William W. Armstrong, W. Burris, D. M. Gingrich et al. · SPIRE - Sciences Po Institutional REpository · 1994 · 218 citations

Collider Physic, Physics, Natural Sciences +5

Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide

M. Schadt, Gerhard Pensl, Robert P. Devaty et al. · Applied Physics Letters · 1994 · 100 citations

Materials Science, Semiconductor Technology, Magnetic Properties +14

Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

Peter Friedrichs, H. Mitlehner, R. Kaltschmidt et al. · Materials science forum · 2000 · 68 citations

Electrical Engineering, Engineering, Power Device +9

Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

Reinhold Schörner, Peter Friedrichs, Dethard Peters et al. · Applied Physics Letters · 2002 · 66 citations

Semiconductor Technology, Metal–oxide–semiconductor Transistors, Electrical Engineering +12