Japanese Journal of Applied Physics · 2002 · 39 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesDevice ReliabilityLaser DiodesNoise In Semiconductor DevicesOptoelectronic DevicesSemiconductor LasersSemiconductor ReliabilityFrequency ModulationHigh-frequency Current ModulationHigh-power Laser DiodesHigh-power LasersHigh-power Semiconductor LasersSemiconductor Laser DiodesThreshold BehaviorThreshold Current Reduction
High-power AlGaInN laser diodes (LDs) with both high kink level and low relative intensity noise (RIN) are successfully fabricated. A kink level of higher than 100 mW is obtained by using a new ridge structure and by narrowing the ridge width down to 1.5 µm. This structure consists of a thin Si on SiO2 multiple buried layers instead of the conventional thick SiO2 buried layer. The low RIN of these devices is obtained by decreasing the threshold current; under optical feedback with high-frequency modulation, the RIN values are as low as -125 dB/Hz. As the RIN of these devices exhibits a tendency to deteriorate with increasing operating current, the lifetime criterion was redefined as the point at which the operating current has increased by 20%. Even under this stricter lifetime criterion, the estimated lifetime of these LDs exceeds 15,000 h under 30 mW cw operation at 60°C.
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