Significant progress in II-VI blue-green laser diodelifetime

Eisaku Kato, Hiroshi Noguchi, M. Nagai, +3

Electronics Letters

Kinetic model for degradation of light-emitting diodes

Shun‐Lien Chuang, Akira Ishibashi, S. Kijima, +3

IEEE Journal of Quantum Electronics

EngineeringOptical Output DegradationSemiconductorsDefect MotionLight-emitting Diodes +14

GaN-Based High Power Blue-Violet Laser Diodes

T. Tojyo, T. Asano, M. Takeya, +5

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringElectrical EngineeringDislocation DensitiesEngineering +11

Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers

Shigetaka Tomiya, Kazuo Funato, Tsunenori Asatsuma, +4

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringChemical DepositionCrystallographic TiltMolecular Beam Epitaxy +15

GaN-based blue laser diodes

Takao Miyajima, T. Tojyo, T. Asano, +10

Journal of Physics Condensed Matter

Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices +14

Universal curves for optical power degradation of II–VI light-emitting diodes

S. L. Chuang, M. Ukita, S. Kijima, +2

Applied Physics Letters

Optical MaterialsEngineeringUniversal CurvesOptoelectronic DevicesElectronic Devices +14

High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise

T. Tojyo, Shiro Uchida, Takashi Mizuno, +7

Japanese Journal of Applied Physics

Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Material +18

Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers

Shigetaka Tomiya, Hiroshi Nakajima, Kazuo Funato, +6

physica status solidi (a)

Gan-based Laser DiodesWide-bandgap SemiconductorEngineeringDislocation InteractionCrystalline Defects +7

AlGaInN high-power lasers grown on an ELO-GaN layer

M. Takeya, Katsunori Yanashima, T. Asano, +14

Journal of Crystal Growth

EngineeringAlgainn High-power LasersApplied PhysicsAluminum Gallium NitrideLaser Material +3

Optimized ZnSe:N/ZnTe:N contact structure of ZnSe-based II–VI laser diodes

S. Kijima, Hiroyuki Okuyama, Yumi Sanaka, +3

Applied Physics Letters

SemiconductorsMaterials ScienceElectrical EngineeringN SuperlatticeEngineering +12