AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films

K. Tsubouchi, Nobuo Mikoshiba · IEEE Transactions on Sonics and Ultrasonics · 1985 · 492 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

1972 ultrasonics symposium proceedings

Ultrasonics · 1973 · 156 citations

Medicine, Physics, Ultrasonography +10

Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel

M. T. Duffy, C. C. Wang, George D. O’Clock et al. · Journal of Electronic Materials · 1973 · 142 citations

Engineering, Materials Engineering, Materials Science +14

Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy

Mitsuo Kawabe, Toshio Ueda · Japanese Journal of Applied Physics · 1987 · 122 citations

Engineering, Materials Science, Electronic Materials +9

Growth morphology and surface-acoustic-wave measurements of AIN films on sapphire

Jingyi Liu, K.M. Lakin, K. L. Wang · Journal of Applied Physics · 1975 · 119 citations

Natural Sciences, Materials Engineering, Materials Science +16