Publication | Closed Access
Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
121
Citations
16
References
1987
Year
Electrical EngineeringGaas GrowthEngineeringEpitaxial GrowthPhysicsApplied PhysicsSingle Domain GaasAntiphase BoundarySemiconductor Device FabricationMolecular Beam EpitaxyMicroelectronicsOptoelectronicsCategoryiii-v SemiconductorCompound Semiconductor
It has been shown that single domain GaAs can be grown on Si(100) which consists of two domains. A mechanism for self-annihilation of the antiphase boundary in the process of GaAs growth has been proposed to explain the experimental result.
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