Keiichiro Asai

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Makoto Miyoshi, Hiroyasu Ishikawa, Takashi Egawa et al. · Applied Physics Letters · 2004 · 93 citations

Engineering, Materials Engineering, Materials Science +17

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

S. Arulkumaran, Masahiro Sakai, Takashi Egawa et al. · Applied Physics Letters · 2002 · 66 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa et al. · Journal of Crystal Growth · 2002 · 56 citations

Engineering, Materials Engineering, Materials Science +14

Impact of strain on free-exciton resonance energies in wurtzite AlN

Hirokatsu Ikeda, Takahiro Okamura, Kodai Matsukawa et al. · Journal of Applied Physics · 2007 · 51 citations · Full text

Natural Sciences, Materials Science, Physics +17

AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

Tomohiko Shibata, Keiichiro Asai, Yukinori Nakamura et al. · Journal of Crystal Growth · 2001 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +12