1993 · 64 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignDevice ScalingField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsNoise In Electronic DevicesNoise In Semiconductor DevicesShort-channel EffectsChannel Length ScalingDevice VariabilityGate Oxide Thickness EffectsMosfet NoiseNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect TransistorsThreshold VoltageVoltage-dependent Fluctuations
In this paper, we have focussed on the threshold voltage V,, fluctuations of 8k NMOSFET’s in a less than 0.8mm2 area, using a newly developed 256x32 transistor array with a 8bit binary counter. It is experimentally shown for the first time that the V,, fluctuations depend on the channel length and the gate oxide thickness. Furthermore, it is directly demonstrated that the V,, fluctuations correlate with the dopant number fluctuations of the channel region.
3
Physical limits in digital electronics
Robert W. Keyes · Proceedings of the IEEE · 1975 · 300 citations