Multiple scattered electron-beam effect in electron-beam lithography

Norio Saitou, Teruo Iwasaki, Fumio Murai

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1991 · 10 citations · 0 references

Concepts

Abstract

The multiple electron beam scattering effect is studied experimentally in an electron optical column. This effect causes a serious problem on the critical dimension of LSI pattern when the whole area of a wafer is exposed to an electron beam. This paper discusses the quantitative analysis and a method of reducing this effect.