Applied Physics Letters · 2001 · 24 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsNanowiresSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesElectroluminescenceHeterostructure DevicesLight-emitting DevicesPhotoluminescencePhotoluminescence SpectroscopyQuantum Well HeterostructuresQuantum Wires
InGaAs quantum wires (QWRs) with cross sections as narrow as 10 nm×20 nm have been fabricated on a (311)A InP V-grooved substrate under an As2 source. Trench-type InGaAs QWRs consist of (111)A and (331)B facets with an angle of about 22°. Cathode-luminescence and photoluminescence measurements confirmed the luminescence peak arising from the QWRs.
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Single quantum wire semiconductor lasers
E. Kapon, S. Simhony, R. Bhat et al. · Applied Physics Letters · 1989 · 206 citations
Hiroshi Okada, Hajime Fujikura, Tamotsu Hashizume et al. · Japanese Journal of Applied Physics · 1997 · 26 citations