Kenji Yonei

Enhanced peak-to-valley current ratio in InGaAs∕InAlAs trench-type quantum-wire negative differential resistance field-effect transistors

Takeyoshi Sugaya, Kee-Youn Jang, Cheol-Koo Hahn et al. · Journal of Applied Physics · 2005 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate

Takeyoshi Sugaya, Mutsuo Ogura, Yoshinobu Sugiyama et al. · Applied Physics Letters · 2001 · 24 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Effects of As₂ Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy

Takeyoshi Sugaya, Yasuhiko Tanuma, Tadashi Nakagawa et al. · Japanese Journal of Applied Physics · 1998 · 21 citations

Engineering, Materials Engineering, Materials Science +17

Difference in Diffusion Length of Ga Atoms under As₂ and As₄ Flux in Molecular Beam Epitaxy

Takeyoshi Sugaya, Tadashi Nakagawa, Yoshinobu Sugiyama et al. · Japanese Journal of Applied Physics · 1997 · 21 citations

Engineering, Materials Science, Physics +16

Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

Kee-Youn Jang, Takeyoshi Sugaya, Cheol-Koo Hahn et al. · Applied Physics Letters · 2003 · 15 citations

Engineering, Electrical Engineering, Materials Science +13