Japanese Journal of Applied Physics · 1991 · 160 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface SciencePlasma Surface TreatmentSemiconductor DefectsSemiconductor Device MaterialsSemiconductor SurfacesSurface PhysicsCrackingHydrogen PassivationIrradiation DamageIrradiation EffectsPassivation TechniquesSemiconductor Surface PreparationSurface Cleaning EffectsWafer Cleaning
Low-temperature cleaning of GaAs substrate by atomic hydrogen irradiation has been demonstrated. Atomic hydrogen was provided by dissociation of hydrogen gas, which was carried out in a simple cracking cell with a 1500°C tungsten filament. Auger electron spectroscopy showed that carbon was removed at 200°C and oxygen was removed at 400°C by 30-min atomic hydrogen irradiation. The surface cleaning of GaAs was confirmed by the change of RHEED pattern from halo to streak after the hydrogen irradiation.
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