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Fabrication and characterization of low temperature (<450°C) grown p-Ge/n-Si photodetectors for silicon based photonics

PhotonicsElectrical EngineeringEngineeringPhotodetectorsP-ge/n-si PhotodetectorsApplied PhysicsSemiconductor Device FabricationOptoelectronic DevicesPhotonic DeviceOptoelectronicsCompound SemiconductorLow Temperature