Applied Physics Letters · 2009 · 21 citations · 16 references
Natural SciencesMaterials EngineeringMaterials ScienceInorganic ChemistrySurface ChemistrySurface ScienceDopingEpitaxial GrowthOxide SemiconductorsSemiconductor Crystal GrowthSemiconductor SurfacesSurface PhysicsAdatom DiffusionEpitaxial Growth KineticsGrowth KineticsLattice DistortionLayer-by-layer GrowthMetalorganic Vapor Phase EpitaxyOxide Growth KineticsSurface Growth
The effect of arsenic doping on the growth kinetics of ZnO during metalorganic vapor phase epitaxy has been investigated. Arsenic was found to segregate to the growth surface and facilitate layer-by-layer growth. Such surfactant enhances the lateral expansion of the terraces preferential along [1¯1¯20] direction and also reduces the screw lattice distortion. Arsenic is expected to reduce the total surface energy and diffusion barrier of oxygen adatoms, hence producing Zn-rich surface condition on the growth front, in which two-dimensional growth is thermodynamically and kinetically favored. The origin of tiny hexagonal pits formed on the wide terrace is discussed in terms of the modified step-bunching mechanism.
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Surfactants in epitaxial growth
M. Copel, M. C. Reuter, Efthimios Kaxiras et al. · Physical Review Letters · 1989 · 1.1K citations