Applied Physics Letters · 1997 · 214 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptoelectronic DevicesQuantum ConfinementQuantum DotsSemiconductor HeterostructuresSemiconductor NanomaterialsSemiconductor PhysicsConcentrationElectron MobilityHigh-electron-mobility TransistorsHysteresisPhotoconductivityQuantum Dot DevicesQuantum Dot MaterialsSemiconductor Quantum Dots
The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration Ns of two dimensional electrons at a given gate voltage Vg is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the Ns-Vg characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested.
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Self-organized growth of regular nanometer-scale InAs dots on GaAs
J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 928 citations