Molecular beam epitaxy of GaSb layers on GaAs (001) substrates by using three-step ZnTe buffer layers

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

John E. Ayers · Journal of Crystal Growth · 1994 · 475 citations

Natural Sciences, Materials Science, Physics +16

Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs

Takafumi Yao, Toshihiko Takeda · Applied Physics Letters · 1986 · 189 citations

Engineering, Electrical Engineering, Materials Science +17

Heteroepitaxial growth of GaSb on Si(001) substrates

Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu et al. · Journal of Crystal Growth · 2004 · 109 citations

Natural Sciences, Materials Engineering, Materials Science +12

Two-dimensional growth of InSb thin films on GaAs(111)A substrates

Kiyoshi Kanisawa, Hiroshi Yamaguchi, Y. Hirayama · Applied Physics Letters · 2000 · 67 citations

Natural Sciences, Materials Science, Physics +17