Applied Physics Letters · 2000 · 67 citations · 17 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsThin FilmsEpitaxial GrowthSemiconductor DefectsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsDefect DensityDislocation PhysicsDislocations In Epitaxial FilmsEarly-stage GrowthEpitaxial Film GrowthHeteroepitaxyMolecular Beam EpitaxyTwo-dimensional Semiconductor Films
Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was formed from the early stage of the growth on the (111)A surface, and the mobilities and carrier concentrations of InSb on (111)A substrates suggested a low defect density due to confinement of the dislocations to the interface.
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Dislocation-free InSb grown on GaAs compliant universal substrates
Felix Ejeckam, M. L. Seaford, Yu‐Hwa Lo et al. · Applied Physics Letters · 1997 · 93 citations