Applied Optics · 2012 · 15 citations · 27 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsLight-emitting DiodesOptical Properties Of SemiconductorsSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsWide Band Gap SemiconductorsContact MaterialsContact ResistanceGallium Nitride (Gan) MaterialsGreen Light-emitting DiodesIndium Tin Oxide Thin FilmsInterferenceOhmic ConductionOhmic Contacts
In search of a better transparent contact to p-GaN, we analyze various metal/indium-tin-oxide (ITO) (Ag/ITO, AgCu/ITO, Ni/ITO, and NiZn/ITO) contact schemes and compare to Ni/Au, NiZn/Ag, and ITO. The metal layer boosts conductivity while the ITO thickness can be adjusted to constructive transmission interference on GaN that exceeds extraction from bare GaN. We find a best compromise for an Ag/ITO (3 nm/67 nm) ohmic contact with a relative transmittance of 97% of the bare GaN near 530 nm and a specific contact resistance of 0.03 Ω·cm2. The contact proves suitable for green light-emitting diodes in epi-up geometry.
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Models for contacts to planar devices
H.H. Berger · Solid-State Electronics · 1972 · 917 citations
Engineering, Electrical Engineering, Electronic Materials +5
Models for contacts to planar devices
Microelectronics Reliability · 1972 · 818 citations
Engineering, Electrical Engineering, Electronic Materials +5
Isamu Akasaki Isamu Akasaki, Hiroshi Amano · Japanese Journal of Applied Physics · 1997 · 661 citations · Full text