Growth and characterization of GaN films on (0001) sapphire substrates by alternate supply of trimethylgallium and NH3

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Gallium vacancies and the yellow luminescence in GaN

Jörg Neugebauer, Chris G. Van de Walle · Applied Physics Letters · 1996 · 1.1K citations

Natural Sciences, Materials Science, Physics +17

High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 961 citations

Engineering, Materials Engineering, Materials Science +17

Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

Yoshiji Horíkoshi, Minoru Kawashima, Hiroshi Yamaguchi · Japanese Journal of Applied Physics · 1986 · 383 citations

Engineering, Materials Engineering, Materials Science +17

Novel metalorganic chemical vapor deposition system for GaN growth

Shuji Nakamura, Yasuhiro Harada, Masayuki Seno · Applied Physics Letters · 1991 · 365 citations · Full text

Engineering, Materials Engineering, Materials Science +17