IEEE Transactions on Nuclear Science · 1995 · 38 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringComputer ArchitectureMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice ScalingHeavy-ion PhysicsMemory DevicesNanoelectronicsBeam SensitivityBit Error RateElectron Track StructureGlobal Response AnalysisHole Angle EffectsLow-energy Electron BeamsStatic Random-access Memory DesignTrack Structure Simulation
SEE data on SRAMs and DRAMs, obtained with low and high energy ions, are presented. The global response of these devices remained coherent using low or high energy beams (angle effects, pattern influences, multiple-bit error proportion, etc.), but discrepancies appeared, in some cases, in the threshold part of the sensitivity curves. These anomalies seem in relation with a track structure.
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