Charge collection in silicon for ions of different energy but same linear energy transfer (LET)

Abstract

Charge collection measurements in thin silicon structures have indicated that more charge is collected for higher energy ions than for the lower energy ions for incident ions with the same LET. The observed differences are larger than can be explained by uncertainties in energy-loss calculations. A possible explanation is in differences in initial track structure. The higher energy track is more diffuse and might yield more charge to be collected because there is less initial electron-hole pair recombination.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>