Applied Physics Letters · 1988 · 25 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceRecombinationSemiconductor MaterialsSpectroscopyDefects In Electronic MaterialsOptical Properties Of SemiconductorsSemiconductor DefectsSemiconductor InterfacesSemiconductor PhysicsDefect ComplexesDefect-related LuminescenceEpitaxial Thin FilmsExciton SpectroscopyExciton StatesExcitonsStructural Defect AnalysisStructural Defects
In previous luminescence studies on CdTe epitaxial films, a line Dμ at 1.593 eV has been associated with the recombination of exciton bound to a neutral donor. We have new evidence to suggest that Dμ cannot be associated with a simple donor impurity, but should be associated with donor-like structural defects or impurity-defect complexes.
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Acceptor states in CdTe and comparison with ZnTe. General trends
E. Molva, J.L. Pautrat, K. Saminadayar et al. · Physical review. B, Condensed matter · 1984 · 222 citations
Temperature dependance of the fundamental absorption edge in CdTe
J. Camassel, D. Auvergne, H. Mathieu et al. · Solid State Communications · 1973 · 78 citations