Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate

Nitride-based semiconductors for blue and green light-emitting devices

F. A. Ponce, D. P. Bour · Nature · 1997 · 1.7K citations

Engineering, Materials Engineering, Materials Science +14

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Tsvetanka Zheleva, Okhyun Nam, M. D. Bremser et al. · Applied Physics Letters · 1997 · 495 citations

Engineering, Materials Engineering, Materials Science +17

Defect structure in selectively grown GaN films with low threading dislocation density

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1997 · 413 citations

Engineering, Materials Engineering, Materials Science +17

InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode

Motokazu Yamada, Tomotsugu Mitani, Yukio Narukawa et al. · Japanese Journal of Applied Physics · 2002 · 375 citations

Engineering, Electrical Engineering, Materials Science +17

Low-dislocation-density GaN from a single growth on a textured substrate

Carol I. H. Ashby, Christine C. Mitchell, Jung Han et al. · Applied Physics Letters · 2000 · 170 citations · Full text

Engineering, Materials Engineering, Materials Science +17