Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires

MOS (Metal Oxide Semiconductor) Physics and Technology

K.J.S. Cave · IEE Proceedings I Solid State and Electron Devices · 1983 · 1.7K citations

Engineering, Chemical Engineering, Nuclear Engineering +12

Doping and Electrical Transport in Silicon Nanowires

Yi Cui, Xiangfeng Duan, Jiangtao Hu et al. · The Journal of Physical Chemistry B · 2000 · 941 citations

Natural Sciences, Materials Science, Physics +17

Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors

P. J. McWhorter, P.S. Winokur · Applied Physics Letters · 1986 · 774 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Hole traps and trivalent silicon centers in metal/oxide/silicon devices

Patrick M. Lenahan, P. V. Dressendorfer · Journal of Applied Physics · 1984 · 716 citations

Engineering, Materials Engineering, Materials Science +17

Paramagnetic Resonance of Lattice Defects in Irradiated Quartz

R. A. Weeks · Journal of Applied Physics · 1956 · 589 citations

Natural Sciences, Materials Science, Crystal Structure +13