Deep level transient spectroscopy of hole defects in bulk-grown <i>p</i>-GaAs using Schottky barrier diodes

Abstract

Schottky barrier diodes were used to detect and study hole defects in bulk-grown p-type GaAs by deep level transient spectroscopy. Several defects with concentrations of 1013–1016/cm3 were studied. It was found that two of these defects, with electronic levels at Ev +0.42 eV and Ev +0.58 eV, have electronic properties that closely correspond to those of Cu- and Fe-related defects in GaAs. It is concluded that Schottky barrier diodes on p-GaAs can be very useful to detect and characterize typical metallic contaminants in GaAs.