Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications - Concepedia

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Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications

18

Citations

2

References

2004

Year

Bernd Thomas, Wolfgang Bartsch, René Stein, Reinhold Schörner, D. Stephani

Materials science forum

Materials EngineeringSemiconductor TechnologyElectrical EngineeringDifferent Cvd SystemsHigh Voltage ApplicationsEngineeringPower DeviceApplied PhysicsCarbide

References

	Year	Citations

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