Structural characterization of InGaN thin films and multiple quantum wells: an approach of combining various X-ray scattering methods

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Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

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Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN

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Natural Sciences, Materials Science, Physics +17

Relaxation Process of the Thermal Strain in the GaN/α-Al₂O₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

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Engineering, Materials Engineering, Materials Science +17

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Yen-Sheng Lin, Kung‐Jeng Ma, Chih‐Wei Hsu et al. · Applied Physics Letters · 2000 · 235 citations

Engineering, Materials Science, Physics +17