Yen-Sheng Lin

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Yen-Sheng Lin, Kung-Jeng Ma, Chih‐Wei Hsu et al. · Applied Physics Letters · 2000 · 232 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung et al. · Journal of Applied Physics · 2002 · 107 citations

Wide-bandgap Semiconductor, Engineering, Nanoelectronics +17

High-performance glass phosphor for white-light-emitting diodes via reduction of Si-Ce^3+:YAG inter-diffusion

Li‐Yin Chen, Chun-Chin Tsai, Yi-Chung Huang et al. · Optical Materials Express · 2013 · 60 citations · Full text

Optical Materials, Engineering, Luminescent Glass +18

Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures

Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung et al. · Applied Physics Letters · 2002 · 49 citations

Photonics, Photoluminescence, Engineering +13

Stimulated emission study of InGaN/GaN multiple quantum well structures

Chi-Chih Liao, Shih-Wei Feng, C. C. Yang et al. · Applied Physics Letters · 2000 · 13 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13