Concepedia

TYPE CONVERSION AND <i>p-n</i> JUNCTIONS IN <i>n</i>-CdTe PRODUCED BY ION IMPLANTATION

J.P. Donnelly, A.G. Foyt, E. D. Hinkley, W.T. Lindley, J. O. Dimmock

Applied Physics Letters · 1968 · 49 citations · 6 references

DOI

Concepts

Abstract

Type conversion and p-n junctions have been produced by the implantation of 400-keV As+ ions into n-CdTe. In forward bias, the junctions emit bandgap infrared radiation at room temperature.

References

6

Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory

G. Mandel · Physical Review · 1964 · 315 citations

, , +16

Self-Compensation-Limited Conductivity in Binary Semiconductors. II.<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-ZnTe

R. S. Title, G. Mandel, F. F. Morehead · Physical Review · 1964 · 120 citations

, , +13

Self-Compensation-Limited Conductivity in Binary Semiconductors. III. Expected Correlations With Fundamental Parameters

G. Mandel, F. F. Morehead, Paul Wagner · Physical Review · 1964 · 113 citations

, , +17

Zn and Te Implantations into GaAs

J. W. Mayer, O. J. Marsh, R.G. Mankarious et al. · Journal of Applied Physics · 1967 · 38 citations

, , +11

Some plasma-physical aspects of mono- and duo-plasmatron ion sources

J. Kistemaker, P.K. Rol, J. Politiek · Nuclear Instruments and Methods · 1965 · 35 citations

, , +12